Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO2 Gate Dielectrics
نویسندگان
چکیده
Effect of Nitridation on Low-Frequency (1/f) Noise in nand p-MOSFETS with HFO2 Gate Dielectrics P. Srinivasan, E. Simoen,* Z. M. Rittersma, W. Deweerd, L. Pantisano, C. Claeys,** and D. Misra* IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 00712, USA Philips Research Leuven, Belgium Electrical Engineering Department, KU Leuven, Belgium
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